On the Nature of the Interstitial Defect with EC −0.16 eV Level in Irradiated Silicon-Reference-Cited by-同舟云学术

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On the Nature of the Interstitial Defect with EC −0.16 eV Level in Irradiated Silicon

Published:1986-02-16 Issue:2 Volume:93 Page:K147-K149
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Murin L. I.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. and , Kratkie Soobshch. po Fiz. No. 10, 23 (1975).

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