Special features of the growth of hydrogenated amorphous silicon in PECVD reactors-Reference-Cited by-同舟云学术

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Special features of the growth of hydrogenated amorphous silicon in PECVD reactors

Published:2000-08 Issue:8 Volume:45 Page:1032-1041
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Gorbachev Yu. E.,Zatevakhin M. A.,Krzhizhanovskaya V. V.,Shveigert V. A.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1307013.pdf

Reference11 articles.

1. O. A. Golikova, Fiz. Tekh. Poluprovodn. (Leningrad) 25, 1517 (1991) [Sov. Phys. Semicond. 25, 915 (1991)].

2. M. J. Kushner, J. Appl. Phys. 63, 2532 (1988).

3. Yu. E. Gorbachev, M. A. Zatevakhin, and I. D. Kaganovich, Zh. Tekh. Fiz. 66(12), 89 (1996) [Tech. Phys. 41, 1247 (1996)].

4. G. J. Nienhuis, W. J. Goedheer, et al., J. Appl. Phys. 82, 2060 (1997).

5. M. I. Zhilyaev, V. A. Shveigert, and I. V. Shveigert, Prikl. Mekh. Tekh. Fiz. 35(1), 13 (1994).

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