The role of SiHn radicals generation in the mechanisms of formation of thin films of amorphous silicon

Abstract

Abstract In this research, we studied the processes of configuration changes to the structural elements of amorphous silicon thin films created by the decomposition of reacting gas mixture (silane and argon) in low-frequency glow discharge plasma. We analyzed how concentrations of various local atomic groups and their links depend on deposition parameters. We also defined phase composition and the role of SiHn radicals generation in the mechanisms of formation of hydrogenated amorphous silicon thin films deposited on glass and Sitall substrates.