Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment-Reference-Cited by-同舟云学术

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Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment

Published:1998-10 Issue:10 Volume:32 Page:1075-1076
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Agekyan V. F.,Ivanov-Omskii V. I.,Knyazevskii V. N.,Rud’ Yu. V.,Rud’ V. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187570.pdf

Reference3 articles.

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. 30, 1998 (1991).

2. Yoshida, J. Cryst. Growth 136, 37 (1994).

3. S. G. Konnikov, V. Yu. Rud’, Yu. V. Rud’, D. Melebaev, A. Berkeliev, M. Serginov, and S. Televov, Jpn. J. Appl. Phys. 32S, 515 (1993).

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