Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

Abstract

Abstract GaAlP films and monocrystalline phases were obtained by method implantation of Al+ with E0 = 1 keV ions at different doses on the surface of a GaP(111) single crystal, their electronic and crystal structure was researched. It was shown that the type and parameters of the three-component nanostructure lattice well coincide with those of the substrate. The relationship between the width of the band gap Eg and the size of nanocrystalline phases is researched. It was found that in the case of the surface dimensions of phases d less than 35-40 nm (thickness 3.5-4 nm), in the nanocrystalline phases Ga0.6Al0.4P quantum-sized effect are conducted.