Photopleochroism of GaPxAs1-xSurface-Barrier Structures-Reference-Cited by-同舟云学术

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Photopleochroism of GaPxAs1-xSurface-Barrier Structures

Published:1993-01-01 Issue:S3 Volume:32 Page:515
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Konnikov S. G.,Rud' V. Yu.,Rud' Yu. V.,Melebaev D.,Berkeliev A.,Serginov M.,Tilevov S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photosensitivity of Nanostructured Schottky Barriers Based on GaP for Solar Energy Applications;Energies;2023-02-28

2. Photosensitivity of heterojunctions obtained using thermal oxidation of indium phosphide;Technical Physics Letters;2007-04

3. Oscillations of induced photopleochroism in ZnO/GaAs heterojunctions;Semiconductors;2004-04

4. Tervalent Conducting Polymers with Tailor-Made Work Functions: Preparation, Characterization, and Applications as Cathodes in Electroluminescent Devices;Journal of the American Chemical Society;2001-08-31

5. Photosensitivity of GaAs: NGaP: N/GaAs (GaP) heterojunctions in linearly polarized radiation;Technical Physics;1999-06

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