Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region-Reference-Cited by-同舟云学术

Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

Published:1998-12 Issue:12 Volume:32 Page:1323-1327
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Evtikhiev V. P.,Kudryashov I. V.,Kotel’nikov E. Yu.,Tokranov V. E.,Titkov A. N.,Tarasov I. S.,Alferov Zh. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187622.pdf

Reference11 articles.

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3. F. Heinrishsdorff, M.-H. Mao, N. Kirstaedter, A. Krost, and D. Bimberg, Appl. Phys. Lett. 71, 22 (1997).

4. V. P. Evtikhiev, A. K. Kryganovskii, A. B. Komissarov, A. N. Titkov, M. Ichida, and A. Nakamura, Inst. Phys. Conf. Ser. 155, 351 (1996).

5. V. P. Evtikhiev, V. E. Tokranov, A. K. Kryzhanovskii, A. M. Boiko, R. A. Suris, A. N. Titkov, A. Nakamura, and M. Ichida, Fiz. Tekh. Poluprovodn. 32, 860 (1998) [Semiconductors 32, 765 (1998)].

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