Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties;Japanese Journal of Applied Physics;2022-07-28
2. Impact of dislocations in InAs quantum dot with InGaAs strain-reducing layer structures on their optical properties;Japanese Journal of Applied Physics;2021-02-24
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