Epitaxial Growth of Iron and Indium Oxide Thin Films on Sapphire R-Plane with a Regular Relief
Author:
Publisher
Pleiades Publishing Ltd
Subject
General Engineering,General Materials Science
Link
http://link.springer.com/content/pdf/10.1134/S2075113319020291.pdf
Reference16 articles.
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2. Gao, H.Y., Yan, F.W., Zhang, Y., Li, J., Zeng, Y., and Wang, G., Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale, J. Appl. Phys., 2008, vol. 103, no. 1, pp. 014314-1–014314-5.
3. Wang, C.H., Ke, C.C., and Chiu, C.H., Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method, J. Cryst. Growth, 2011, vol. 315, pp. 242–245.
4. Butashin, A.V., Kanevskii, V.M., Muslimov, A.E., et al., Specific features of the growth of AII BVI films on (0001)Al2O3 substrates, Crystallogr. Rep., 2014, vol. 59, no. 3, pp. 418–421.
5. Muslimov, A.E., Butashin, A.V., Vlasov, V.P., and Kanevsky, V.M., Vapor phase epitaxy of CdTe on sapphire substrates in dependence on the vapor-flow orientation, Crystallogr. Rep., 2016, vol. 61, no. 6, pp. 1015–1019.
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