Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate-Reference-Cited by-同舟云学术

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Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate

Published:2012-02-06 Issue:6 Volume:27 Page:971-977
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Lin H.Y.,Chen Y.J.,Chang C.L.,Li X.F.,Kuo C.H.,Hsu S.C.,Liu C.Y.

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

2. Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs

3. Spontaneous polarization effects inGaN/AlxGa1−xNquantum wells

4. Fabrication of Pyramidal Patterned Sapphire Substrates for High-Efficiency InGaN-Based Light Emitting Diodes

5. Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy

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1. Monte Carlo Simulation of the Wet Etching Based On the Complicated Atomic Structure of Sapphire;2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS);2024-01-21

2. Etching peculiarities in sapphire induced by double-pulse irradiation with variable delay and crossed polarisation;Optics & Laser Technology;2023-12

3. Controllable fabrication of polygonal micro and nanostructures on sapphire surfaces by chemical etching after femtosecond laser irradiation;Optical Materials Express;2019-06-20

4. Epitaxial Growth of Iron and Indium Oxide Thin Films on Sapphire R-Plane with a Regular Relief;Inorganic Materials: Applied Research;2019-03

5. AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture at Various Temperatures;ECS Journal of Solid State Science and Technology;2017

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