P-20: A Short Channel Effect in Low Temperature Poly-Si Thin Film Transistor for Active Matrix Display-Reference-Cited by-同舟云学术

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P-20: A Short Channel Effect in Low Temperature Poly-Si Thin Film Transistor for Active Matrix Display

Published:2006 Issue:1 Volume:37 Page:254
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Park J. H.,Nam W. J.,Lee J. H.,Han M. K.,Lee K. Y.,Choi B. D.,Yoo K. J.,Park H. H.

Publisher

Wiley

Reference10 articles.

1. Degradation due to electrical stress of poly-Si thin film transistors with various LDD lengths

2. Parallel hot-carrier-induced degradation mechanisms in hydrogen-passivated polysilicon-on-insulator LDD p-MOSFET's

3. Jen-Ming Chen, Yung-Fu Wu, Yung-Hui Yeh and Chai Yuan Sheu, “Suppressing hump effect of short channel low temperature poly-Si TFT”, AMLCD 03 Digest of technical papers, pp.177–180, 2003.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P‐1.13: Electrical Performance of Side Wrapped Thin Film Transistor;SID Symposium Digest of Technical Papers;2024-04

2. Effect of source–drain contact and channel length on the performance of vertical thin-film transistors;AIP Advances;2023-10-01

3. Abnormal threshold voltage shifts in p-channel low temperature polycrystalline silicon TFTs under deep UV irradiation;AIP Advances;2021-08-01

4. Hydrogenated n-Channel Low Temperature Polycrystalline Silicon TFTs as Ultraviolet Dosimeters;IEEE Journal of the Electron Devices Society;2021

5. Characterization of poly-Si TFT variation using interdigitated method;Solid-State Electronics;2008-08

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