The study of oxide-interface and grain-boundary traps in poly-Si TFT characteristics and its application to fabrication process diagnosis-Reference-Cited by-同舟云学术

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The study of oxide-interface and grain-boundary traps in poly-Si TFT characteristics and its application to fabrication process diagnosis

Published:2005 Issue:12 Volume:13 Page:1027
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:J. Soc. Inf. Display

Author:

Kimura M.,Yasuhara T.,Harada K.,Abe D.,Inoue S.,Shimoda T.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors

2. Two-Dimensional Device Simulation for Polycrystalline Silicon Thin-Film Transistor

3. On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors

4. Modeling of laser-annealed polysilicon TFT characteristics

5. Differentiation of Effects due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors

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1. Reduction of short-time image sticking in organic light-emitting diode display through transient analysis of low-temperature polycrystalline silicon thin-film transistor;Displays;2024-09

2. High-performance a-IGZO-based flexible TTFT with stacked dielectric layers via ultrathin high-κ SrTiO3 buffer layer grown on HfO2;Journal of Materials Science: Materials in Electronics;2022-01

3. Polycrystalline silicon thin-film transistor with nickel–titanium oxide by sol–gel spin-coating and nitrogen implantation;Solid-State Electronics;2012-12

4. Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors;Electrochemical and Solid-State Letters;2010

5. Electrical Properties of High-κ Praseodymium Oxide Polycrystalline Silicon Thin-Film Transistors with Nitrogen Implantation;Japanese Journal of Applied Physics;2008-02-15

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