Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors-Reference-Cited by-同舟云学术

Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

Published:2010 Issue:4 Volume:13 Page:H101
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Furuta Mamoru,Nakanishi Takashi,Kimura Mutsumi,Hiramatsu Takahiro,Matsuda Tokiyoshi,Furuta Hiroshi,Kawaharamura Toshiyuki,Li Chaoyang,Hirao Takashi

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference23 articles.

1. Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving

2. Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display

3. N. Morosawa, T. Nakayama, T. Arai, Y. Inagaki, K. Tatsuki, and T. Urabe , in Proceedings of the 14th International Display Workshops , The Institute of Image Information and Television Engineers and The Society for Information Display, p. 71 (2007).

4. 42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM-OLED Display

5. High Mobility Thin Film Transistors with Transparent ZnO Channels

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