Differentiation of Effects due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High performance thin-film transistors fabricated on a single crystal Si strip by micro-chevron laser beam scanning method;Japanese Journal of Applied Physics;2020-07-01
2. Grain-boundary-limited carrier mobility in polycrystalline silicon with negative temperature dependence: modeling carrier conduction through grain-boundary traps based on trap-assisted tunneling;Japanese Journal of Applied Physics;2019-01-22
3. A New Method for Determining the Subgap Density of States in n-/p-Type Low-Temperature Polycrystalline-Silicon Thin-Film Transistors;Journal of Nanoscience and Nanotechnology;2017-05-01
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5. Mechanism Analysis of Current–Voltage Characteristic in a Lightly Doped Drain Polycrystalline Silicon Thin-Film Transistor Using Activation Energy;Japanese Journal of Applied Physics;2012-03-21
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