16.4: Low-Temperature Fabrication of Flexible AMOLED Displays Using Oxide TFTs with Polymer Gate Insulators-Reference-Cited by-同舟云学术

16.4: Low-Temperature Fabrication of Flexible AMOLED Displays Using Oxide TFTs with Polymer Gate Insulators

Published:2011-06 Issue:1 Volume:42 Page:202-205
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Nakata Mitsuru,Sato Hiroto,Nakajima Yoshiki,Fujisaki Yoshihide,Takei Tatsuya,Shimizu Takahisa,Suzuki Mitsunori,Fukagawa Hirohiko,Motomura Genichi,Yamamoto Toshihiro,Fujikake Hideo

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.3621272/fullpdf

Reference14 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. ZnO-based transparent thin-film transistors

4. ZnO-based thin-film transistors of optimal device performance

5. 69.3: Amorphous Oxide TFT Backplane for Large Size AMOLED TVs

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