Threshold voltage shift-proof circular oxide thin film transistor with top and bottom gates for high bending stability-Reference-Cited by-同舟云学术

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Threshold voltage shift-proof circular oxide thin film transistor with top and bottom gates for high bending stability

Published:2020-09-14 Issue:10 Volume:59 Page:104001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mativenga Mallory^ORCID,Lim Seoungbum,Haque Farjana^ORCID,Ryu Jehwang

Funder

National Research Foundation of South Korea (NRF) through the Korean Government Ministry of Science, ICP and Future Planning

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/abb250/pdf

Reference59 articles.

1. Flexible Electronics and Displays: High-Resolution, Roll-to-Roll, Projection Lithography and Photoablation Processing Technologies for High-Throughput Production

2. A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications

3. The path to ubiquitous and low-cost organic electronic appliances on plastic

4. Flexible membrane pressure sensor

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact;IEEE Transactions on Electron Devices;2023-12

2. Active-matrix micro-light-emitting diode displays driven by monolithically integrated dual-gate oxide thin-film transistors;Journal of Materials Chemistry C;2022

3. Highly Stable Thin-Film Transistors for Flexible and Transparent Displays;2021 International Conference on Electrical, Computer and Energy Technologies (ICECET);2021-12-09

4. A novel extraction method of device parameters for thin-film transistors (TFTs);Physics Letters A;2021-07

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