15.2: Development of Driver-Integrated Panel Using Amorphous In-Ga-Zn-Oxide TFT-Reference-Cited by-同舟云学术

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15.2: Development of Driver-Integrated Panel Using Amorphous In-Ga-Zn-Oxide TFT

Published:2009 Issue:1 Volume:40 Page:184
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Osada Takeshi,Akimoto Kengo,Sato Takehisa,Ikeda Masataka,Tsubuku Masashi,Sakata Junichiro,Koyama Jun,Serikawa Tadashi,Yamazaki Shunpei

Publisher

Wiley

Reference6 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs

3. S.-H. K. Park, C.-S. Hwang, C. Byun, M. Ryu, J.-I. Lee, H. Y. Chu and K.I. Cho: IMID'07, pp.1249 (2007).

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