Gate Driver Circuit Based on Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Capacitive Coupling Effect-Reference-Cited by-同舟云学术

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Gate Driver Circuit Based on Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Capacitive Coupling Effect

Published:2022-04 Issue:4 Volume:69 Page:1864-1869
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Jungwoo¹^ORCID,Hong Yong-Hoo¹^ORCID,Jung Eun Kyo¹^ORCID,Hong Sara¹,Jeon Jae-Hong²^ORCID,Park Keechan³^ORCID,Im Hwarim¹^ORCID,Kim Yong-Sang¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea

2. School of Electronics and Information Engineering, Korea Aerospace University, Goyang, South Korea

3. Department of Electronics Engineering, Konkuk University, Seoul, South Korea

Funder

Technology Innovation Program

Ministry of Trade, Industry and Energy (MOTIE), South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9741401/09723506.pdf?arnumber=9723506

Reference17 articles.

1. Effects of defect creation on bidirectional behavior with hump characteristics of InGaZnO TFTs under bias and thermal stress

2. High‐reliability gate driver on array using noise sharing of precharging node for thin film transistor–liquid crystal display application

3. Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

4. 28-2: A Novel OLED Display Panel with High-Reliability Integrated Gate Driver Circuit using IGZO TFTs for Large-Sized UHD TVs

5. a-Si:H TFT-based gate driver circuit using Q node as both pull-up and hold-down controller

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparative study of thin-film transistors based on mist-CVD deposited InAlZnO with different Al contents;Current Applied Physics;2024-09

2. Embedded Gate Driver Circuit With Self-Aligned InGaZnO TFTs Using Common Bootstrapped Capacitive Driving for High-Resolution WOLED Displays;IEEE Transactions on Electron Devices;2024-06

3. High-speed, low-voltage, small-pitch and robust OTFT-based integrated gate driver for active-matrix displays;Organic Electronics;2024-01

4. Indium–Gallium–Zinc Oxide Thin-Film Transistor-Based Scan Driver Circuit Using Separate Driving Structure for Multiple Output Signals;IEEE Transactions on Electron Devices;2023-07

5. P‐22: Scan Driver Circuit with Multiple Outputs employing Low‐temperature Polysilicon and Oxide TFTs for Mobile Displays;SID Symposium Digest of Technical Papers;2023-06

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