Thermally reversible band bending for Bi/GaAs(110): Photoemission and inverse-photoemission investigations
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.5960/fulltext
Reference28 articles.
1. Column III and V elements on GaAs (110): Bonding and adatom‐adatom interaction
2. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)
3. Surface electronic structure of GaAs(110)1×1-Sb studied with angle-resolved photoelectron spectroscopy
4. Sb/GaAs(110) interface: A reevaluation
5. The role of order on the interface properties of Sb/GaAs(110)
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