Local structure of Ge quantum dots self-assembled on Si(100) probed by x-ray absorption fine-structure spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.075319/fulltext
Reference31 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures
3. Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate
4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
5. Instability of two-dimensional layers in the Stranski-Krastanov growth mode of Ge on Si(111)
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