Monte Carlo simulation of In surface segregation during the growth ofInxGa1−xAs on GaAs(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.998/fulltext
Reference28 articles.
1. Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy
2. Surface segregation and growth interface roughening in AlxGa1-xAs
3. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
4. In situprobing at the growth temperature of the surface composition of (InGa)As and (InAl)As
5. Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures
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