Surface segregation and growth interface roughening in AlxGa1-xAs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam Epitaxy
2. Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures
3. Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxy
4. Extrinsic layer at AlxGa1−xAs‐GaAs interfaces
5. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
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