Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy
2. Surface segregation and growth interface roughening in AlxGa1-xAs
3. Indium surface segregation in strained GaInAs quantum wells grown on GaAs by MBE
4. Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy
5. Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs
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