Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365476
Reference21 articles.
1. Twenty years of semiconductor surface and interface structure determination and prediction: The role of the annual conferences on the physics and chemistry of semiconductor interfaces
2. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
3. Surface segregation in III–V alloys
4. Growth of InGaAs/GaAs heterostructures with abrupt interfaces on the monolayer scale
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1. MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors;Journal of Physics D: Applied Physics;2020-01-22
2. In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots;Materials Research Express;2019-11-20
3. Interfacial relaxation analysis of InGaAs/GaAsP strain-compensated multiple quantum wells and its optical property;Superlattices and Microstructures;2018-02
4. Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes;Chinese Physics B;2016-09-23
5. Nanoscopy of Phase Separation in InxGa1–xN Alloys;ACS Applied Materials & Interfaces;2016-08-26
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