Different Fermi-level pinning behavior onn- andp-type GaAs(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.4612/fulltext
Reference9 articles.
1. Compensating surface defects induced by Si doping of GaAs
2. Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular-beam epitaxially grown GaAs(001)
3. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
4. Effect of Si doping on surface ordering of MBE GaAs(001)
5. Tunneling spectroscopy of the GaAs(110) surface
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