Effect of Si doping on surface ordering of MBE GaAs(001)
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. 7 × 7 Reconstruction on Si(111) Resolved in Real Space
2. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
3. Reconstructions of GaAs(1¯ 1¯ 1¯) surfaces observed by scanning tunneling microscopy
4. The application of scanning tunneling microscopy to the study of molecular beam epitaxy
5. Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy
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3. Interfacial Chemistry of Oxides on III-V Compound Semiconductors;Fundamentals of III-V Semiconductor MOSFETs;2010
4. Arsenic-rich GaAs(0 0 1) surface structure;Surface Science Reports;2005-12
5. Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces;Advances in Scanning Probe Microscopy;2000
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