Microscopic-scale lateral inhomogeneities of the Schottky-barrier-formation process-Reference-Cited by-同舟云学术

Microscopic-scale lateral inhomogeneities of the Schottky-barrier-formation process

Published:1993-12-15 Issue:23 Volume:48 Page:17163-17167
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Gozzo F.,Marsi M.,Berger H.,Margaritondo G.,Ottolenghi A.,Ray-Chaudhuri A. K.,Ng W.,Liang S.,Singh S.,Welnak J. T.,Wallace J. P.,Capasso C.,Cerrina F.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.17163/fulltext

Reference14 articles.

1. Metal–GaSe and metal–InP interfaces: Schottky barrier formation and interfacial reactions

2. Metal-gallium selenide interfaces-observation of the true Schottky limit

3. GaSeGe: A “Schottky-like” heterojunction

4. Summary Abstract: GaSe–Ge and GaSe–Si: Two possible examples of Schottky‐like behavior of heterojunction interfaces

5. Zur Halbleitertheorie der Sperrschicht- und Spitzengleichrichter

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