GaSeGe: A “Schottky-like” heterojunction-Reference-Cited by-同舟云学术

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GaSeGe: A “Schottky-like” heterojunction

Published:1984-08 Issue:7 Volume:51 Page:495-497
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Daniels R.R.,Margaritondo G.,Quaresima C.,Capozi M.,Perfetti P.,Lévy F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference9 articles.

1. Heterojunctions and Metal-Semiconductor Junctions;Milnes,1972

2. Microscopic investigations of semiconductor interfaces

3. Metal–GaSe and metal–InP interfaces: Schottky barrier formation and interfacial reactions

4. Soft X-ray photoemission spectroscopy of chemical reactivity at metal-GaSe interfaces

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1. The Role of Photoemission Spectroscopies in Heterojunction Research;Characterization of Semiconductor Heterostructures and Nanostructures;2013

2. The role of photoemission spectroscopies in heterojunction research;Characterization of Semiconductor Heterostructures and Nanostructures;2008

3. Electronic Properties of Van Der Waals-Epitaxy Films and Interfaces;Electron Spectroscopies Applied to Low-Dimensional Materials;2002

4. Interface states at semiconductor junctions;Reports on Progress in Physics;1999-01-01

5. Band discontinuity fluctuations and local chemistry at the GaSe–Si interface;Applied Physics Letters;1998-09-28

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