Analysis of temperature dependent electrical characteristics of Au/GaSe Schottky barrier diode improved by Ce-doping-Reference-Cited by-同舟云学术

Analysis of temperature dependent electrical characteristics of Au/GaSe Schottky barrier diode improved by Ce-doping

Published:2020-11 Issue: Volume:315 Page:112264
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Ertap Hüseyin,Kacus Hatice,Aydogan Sakir,Karabulut Mevlut

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference50 articles.

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4. Properties of gallium selenide single crystal;Fernelius;Progress in Crystal Growth and Characterization of Materials,1994

5. Kinetics of radiative recombinations in GaSe and influence of Cu doping on the luminescence spectra;Capozzi;Physical Review B,1982

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