Atomic and electronic structure of perfect dislocations in the solar absorber materials CuInSe2 and CuGaSe2 studied by first-principles calculations
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.115203/fulltext
Reference43 articles.
1. 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
2. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%
3. Anomalous Grain Boundary Physics in PolycrystallineCuInSe2: The Existence of a Hole Barrier
4. Grain-Boundary Physics in PolycrystallineCuInSe2Revisited: Experiment and Theory
5. How grain boundaries in Cu(In,Ga)Se2 thin films are charged: Revisit
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