Phase transitions on the Ge(111) and Si(111) surfaces from core-level studies
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.1258/fulltext
Reference25 articles.
1. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
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4. Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy
5. A LEED study of Ge(111); a high-temperature incommensurate structure
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