Interdiffusion: A probe of vacancy diffusion in III-V materials
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.15813/fulltext
Reference10 articles.
1. Energetics of self‐diffusion in GaAs
2. The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures
3. Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures
4. First direct observation of voids in bulk, undoped, semi‐insulating GaAs
5. New MBE buffer used to eliminate backgating in GaAs MESFETs
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