Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain terahertz spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.125205/fulltext
Reference23 articles.
1. Low-Temperature Grown III-V Materials
2. Annealing dynamics of molecular‐beam epitaxial GaAs grown at 200 °C
3. Investigation of deep electronic centers in low-temperature grown GaAs using extremely thin layers
4. Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs
5. Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs
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