Approach to achieving a p -type transparent conducting oxide: Doping of bismuth-alloyed Ga2O3 with a strongly correlated band edge state
Author:
Funder
National Natural Science Foundation of China
National Science Foundation
China Scholarship Council
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.103.115205/fulltext
Reference38 articles.
1. Overcoming the doping bottleneck in semiconductors
2. Recent progress in the growth of β-Ga2O3 for power electronics applications
3. Current status of Ga2O3power devices
4. A review of Ga2O3materials, processing, and devices
5. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 全氧化镓薄膜同质p-n结;Science China Materials;2024-01-23
2. Recent Progress in Source/Drain Ohmic Contact with β-Ga2O3;Inorganics;2023-10-11
3. Light‐Induced Frenkel Defect Pair Formation Can Lead to Phase‐Segregation of Otherwise Miscible Halide Perovskite Alloys;Advanced Energy Materials;2023-10-11
4. Bandgap narrowing and hole self-trapping reduction in Ga2O3 by Bi2O3 alloying;Journal of Alloys and Compounds;2023-10
5. Study on the preparation and properties of (BixGa1-x)2O3 alloy semiconductor film deposited by radio frequency co-sputtering;Journal of Materials Science: Materials in Electronics;2023-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3