Approach to achieving a p -type transparent conducting oxide: Doping of bismuth-alloyed Ga2O3 with a strongly correlated band edge state
Author:
Funder
National Natural Science Foundation of China
National Science Foundation
China Scholarship Council
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.103.115205/fulltext
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1. Overcoming the doping bottleneck in semiconductors
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