First-principles pseudopotential calculations of passivated GaAs(001) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.17661/fulltext
Reference30 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. The passivation of gallium arsenide surfaces with atomic sulfur
3. S2Cl2 treatment: A new sulfur passivation method of GaAs surface
4. Determination of the structure of GaAs(100)-S with chemical-state-specific photoelectron diffraction
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