Electron effective mass and nonparabolicity inGa0.47In0.53As/InP quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.1038/fulltext
Reference23 articles.
1. Quantum microstructure devices
2. Nonparabolicity effects in a quantum well: Sublevel shift, parallel mass, and Landau levels
3. Dependence on quantum confinement of the in-plane effective mass inGa0.47In0.53As/InP quantum wells
4. Microwave and far-infrared induced optically detected cyclotron resonance in epitaxial InP and GaAs
5. Electron effective mass in direct-band-gapGaAs1−xPxalloys
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