Electronic transport properties of electron- and hole-doped semiconductingC1bHeusler compounds:NiTi1−xMxSn(M=Sc,V)-Reference-Cited by-同舟云学术

Electronic transport properties of electron- and hole-doped semiconductingC1bHeusler compounds:NiTi1−xMxSn(M=Sc,V)

Published:2010-08-11 Issue:8 Volume:82 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ouardi Siham,Fecher Gerhard H.,Balke Benjamin,Kozina Xenia,Stryganyuk Gregory,Felser Claudia,Lowitzer Stephan,Ködderitzsch Diemo,Ebert Hubert,Ikenaga Eiji

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.085108/fulltext

Reference35 articles.

1. Covalent bonding and the nature of band gaps in some half-Heusler compounds

2. Electronic phase diagram of the XTZ (X=Fe, Co, Ni; T=Ti, V, Zr, Nb, Mn; Z=Sn, Sb) semi-Heusler compounds

3. New and Old Concepts in Thermoelectric Materials

4. Effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds

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