Synergizing a Large Ordinary Nernst Effect and Axis‐Dependent Conduction Polarity in Flat Band KMgBi Crystals

Abstract

AbstractThe exploration of quantum materials in which an applied thermo/electrical/magnetic field along one crystallographic direction produces an anisotropic response has led to unique functionalities. Along these lines, KMgBi is a layered, narrow gap semiconductor near a critical state between multiple Dirac phases due to the presence of a flat band near the Fermi level. The valence band is highly anisotropic with minimal cross‐plane dispersion, which, in combination with an isotropic conduction band, enables axis‐dependent conduction polarity. Thermopower and Hall measurements indicate dominant p‐type conduction along the cross‐plane direction, and n‐type conduction along the in‐plane direction, leading to a significant zero‐field transverse thermoelectric response when the heat flux is at an angle to the principal crystallographic directions. Additionally, a large Ordinary Nernst effect (ONE) is observed with an applied field.  It arises from the ambipolar term in the Nernst effect, whereby the Lorentz force on electrons and holes makes them drift in opposite directions so that the resulting Nernst voltage becomes a function of the difference between their partial thermopowers, greatly enhancing the ONE. It is proven that axis‐dependent polarity can synergistically enhance the ONE, in addition to leading to a zero‐field transverse thermoelectric performance.