Effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1868063
Reference9 articles.
1. Gap at the Fermi level in the intermetallic vacancy system RBiSn(R=Ti,Zr,Hf)
2. Narrow band in the intermetallic compounds MNiSn (M=Ti, Zr, Hf)
3. Band gap and stability in the ternary intermetallic compounds NiSnM(M=Ti,Zr,Hf): A first-principles study
4. 1996 Proceedings ICT’96: 15th International Conference on Thermoelectronics;Cook B. A.
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