Optical properties of heavily dopedGaN/(Al,Ga)Nmultiple quantum wells grown on6H−SiC(0001)by reactive molecular-beam epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.16025/fulltext
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1. The role of piezoelectric fields in GaN-based quantum wells
2. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
3. Spontaneous polarization and piezoelectric constants of III-V nitrides
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