Structural, electronic, and optical properties of strainedSi1−xGexalloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.18355/fulltext
Reference23 articles.
1. Ultrathin SimGenstrained layer superlattices-a step towards Si optoelectronics
2. Silicon-based optoelectronics
3. Silicon-based semiconductor heterostructures: column IV bandgap engineering
4. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
5. Electric subbands in Si/SiGe strained layer superlattices
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2. Effect of N-type doping and vacancy formation on the thermodynamic, electrical, structural, and bonding properties of Si: X. (X = P, As, and Sb): a theoretical study;Semiconductor Science and Technology;2020-10-13
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4. Work function bowing in Si1−xGex heterostructures: Ab initio results;Journal of Applied Physics;2016-02-28
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