Structural, electronic, and optical properties of strainedSi1−xGexalloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.18355/fulltext
Reference23 articles.
1. Ultrathin SimGenstrained layer superlattices-a step towards Si optoelectronics
2. Silicon-based optoelectronics
3. Silicon-based semiconductor heterostructures: column IV bandgap engineering
4. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
5. Electric subbands in Si/SiGe strained layer superlattices
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2. Superlattice effects and limitations of non-destructive measurement of advanced Si/Si(1-x)Ge(x) superlattice structures using Mueller matrix scatterometry (MMSE) and high-resolution x-ray diffraction (XRD);Metrology, Inspection, and Process Control XXXVIII;2024-04-10
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