Work function bowing in Si1−xGex heterostructures: Ab initio results-Reference-Cited by-同舟云学术

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Work function bowing in Si1−xGex heterostructures: Ab initio results

Published:2016-02-28 Issue:8 Volume:119 Page:085705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Amato Michele¹,Bertocchi Matteo²^ORCID,Ossicini Stefano²³^ORCID

Affiliation:

1. Institut d'Électronique Fondamentale, UMR 8622, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay, France

2. Dipartimento di Scienze e Metodi dell'Ingegneria, Universitá di Modena e Reggio Emilia, Via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia, Italy

3. CNR-Istituto Nanoscienze-S3, via Campi 213 A, I-41125 Modena, Italy

Funder

IDEX Paris-Saclay

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942526

Reference43 articles.

1. Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications

2. Silicon germanium heterostructures in electronics: the present and the future

3. Si/SiGe heterostructures: from material and physics to devices and circuits

4. SiGe nanostructures

5. The revolution in SiGe: impact on device electronics

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Simulation Study of SiGe Shell Channel CFET for Sub-2-nm Technology Nodes;IEEE Transactions on Electron Devices;2023-03

2. A Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission based on crystal orientation optimization and Sn alloying technology;Acta Physica Sinica;2021

3. Calculation of Ge1-xYx (Sn, Pb) work function along (100), (110), (111) directions based on first principle;Semiconductor Science and Technology;2020-07-15

4. Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures;Physical Chemistry Chemical Physics;2020

5. Analysis of Capacitance–Voltage Characteristics for Ultrathin Si/SiGe/Si Hetero-Layered MOS Structure;Advances in Intelligent Systems and Computing;2019-10-31

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