Anharmonicity and local lattice distortion in strained Ge-dilute Si1−Ge alloy-Reference-Cited by-同舟云学术

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Anharmonicity and local lattice distortion in strained Ge-dilute Si1−Ge alloy

Published:2015-12 Issue: Volume:653 Page:117-121
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Dong Juncai,Guo Zhiying,Zhang Xiaoli,An Pengfei,Gong Yu,Zhu Hailiang,Li Pengshan,Chen Dongliang

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference35 articles.

1. SiGe Technology: Heteroepitaxy and High-Speed Microelectronics

2. Silicon germanium makes its mark

3. Structural, electronic, and optical properties of strainedSi1−xGexalloys

4. Band structure and symmetry analysis of coherently grownSi1−xGexalloys on oriented substrates

5. SiGe alloys and superlattices for optoelectronics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous radial and angular strain relaxation around dilute p-, isoelectronic-, and n-type dopants in Si crystal;Physica B: Condensed Matter;2017-02

2. Toward a Unified Identification of Ti Location in the MFI Framework of High-Ti-Loaded TS-1: Combined EXAFS, XANES, and DFT Study;The Journal of Physical Chemistry C;2016-09-02

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