Comment on ‘‘Identification of a defect in a semiconductor:EL2in GaAs’’
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.7668/fulltext
Reference12 articles.
1. Identification of a defect in a semiconductor:EL2 in GaAs
2. EL2 and Related Defects in GaAs--Challenges and Pitfalls
3. Electrical property improvements in In‐doped dislocation‐free GaAs by bulk annealing
4. Inverted thermal conversion—GaAs, a new alternative material for integrated circuits
5. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Native defects and transition metal impurities at interstitial sites in gaas;International Journal of Quantum Chemistry;2009-06-19
2. Interdefect correlation during thermal recovery ofEL2in semi-insulating GaAs: Proposal of a three-center-complex model;Physical Review B;2003-03-31
3. The Nature of As-related Defects in Semi-Insulating GaAs Bulk Crystals;Crystal Research and Technology;1992
4. The EL2 Defect in GaAs: Some Recent Developments;physica status solidi (b);1989-07-01
5. Annealing of GaAs single crystal: Relationship between electrical properties and structural defects;Journal of Applied Physics;1989-02
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