Annealing of GaAs single crystal: Relationship between electrical properties and structural defects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343063
Reference19 articles.
1. The theoretical and experimental fundamentals of decreasing dislocations in melt grown GaAs and InP
2. Photoluminescence Studies on Semi-Insulating In-Doped Dislocation-Free GaAs Grown by LEC Method
3. Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs
4. Correlation of undoped, in-alloyed, and whole-ingot annealed semi-insulating GaAs substrates for low-noise microwave amplifiers
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2. Why are arsenic clusters situated at dislocations in gallium arsenide?;Applied Physics Letters;2003-02-24
3. Interactions of point defects with dislocations in n-type silicon-doped GaAs;Journal of Physics: Condensed Matter;2002-08-22
4. On the absence of decoration As precipitates at dislocations in Te-doped GaAs;Journal of Physics: Condensed Matter;2000-11-21
5. Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAs;Materials Science and Engineering: B;1998-08
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