Inverted thermal conversion—GaAs, a new alternative material for integrated circuits
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97527
Reference8 articles.
1. Effects of stoichiometry on thermal stability of undoped, semi‐insulating GaAs
2. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs
3. Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors
4. Bridgman‐Type Apparatus for the Study of Growth‐Property Relationships: Arsenic Vapor Pressure ‐ GaAs Property Relationship
5. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
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1. AsGa+ antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures;Applied Physics Letters;2013-10-14
2. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures;Journal of Applied Physics;2013-04-07
3. Ab Initio Green's Function Calculation of Hyperfine Interactions for Shallow Defects in Semiconductors;Advanced Calculations for Defects in Materials;2011-06-18
4. Ab initio Green's function calculation of hyperfine interactions for shallow defects in semiconductors;physica status solidi (b);2010-09-24
5. Defects in AlSb: A density functional study;Physical Review B;2009-01-22
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