Oxide-cluster nucleation, growth, and saturation on Si(001)-(2×1) surfaces: Atomic-scale measurements and models
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.15432/fulltext
Reference18 articles.
1. Surface etching and roughening in integrated processing of thermal oxides
2. Evolution of atomic‐scale roughening on Si(001)‐(2×1) surfaces resulting from high temperature oxidation
3. Scanning Tunneling Microscopy study of Oxide Nucleation and Oxidation-Induced Roughening at Elevated Temperatures on the Si(001)-(2 × 1) Surface
4. Simulation of a lattice model for the evolution of Si(001) surfaces exposed to oxygen at elevated temperatures
5. The reaction of atomic oxygen with Si(100) and Si(111)
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