Diffusion of Atomic Oxygen on the Si(100) Surface-Reference-Cited by-同舟云学术

Diffusion of Atomic Oxygen on the Si(100) Surface

Published:2010-07-06 Issue:29 Volume:114 Page:12649-12658
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Arora Pooja¹,Li Wei¹,Piecuch Piotr¹,Evans James W.¹,Albao Marvin¹,Gordon Mark S.¹

Affiliation:

1. Department of Chemistry and Ames Laboratory, Iowa State University, Ames, Iowa 50011, Department of Chemistry, Michigan State University, East Lansing, Michigan 48824, Ames Laboratory and Departments of Physics & Astronomy and Mathematics, Iowa State University, Ames, Iowa 50011, and Insitute of Mathematical Science and Physics, University of the Philippines Los Banos, Laguna 4031, Philippines

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp102998y

Reference85 articles.

1. Goddard, W. A., III; Low, J. J.; Olafson, B. D.; Redondo, A.; Zeiri, Y.; Steigerwald, M. L.; Carter, E. A.; Allison, J. N.; Chang, R., inProceedings of the Symposium on the Chemistry and Physics of Electrocatalysis;McIntyre, J. D. E., Weaver, M. J., Yeager, E. B., Eds.The Electrochemical Society, Inc.:Pennington, NJ, 1984; Vol. 84−12, pp63−95.

2. Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Deposited at Low Temperatures

3. Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films

4. The drive to miniaturization

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