Diffusion of Atomic Oxygen on the Si(100) Surface

Author:

Arora Pooja1,Li Wei1,Piecuch Piotr1,Evans James W.1,Albao Marvin1,Gordon Mark S.1

Affiliation:

1. Department of Chemistry and Ames Laboratory, Iowa State University, Ames, Iowa 50011, Department of Chemistry, Michigan State University, East Lansing, Michigan 48824, Ames Laboratory and Departments of Physics & Astronomy and Mathematics, Iowa State University, Ames, Iowa 50011, and Insitute of Mathematical Science and Physics, University of the Philippines Los Banos, Laguna 4031, Philippines

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Reference85 articles.

1. Goddard, W. A., III; Low, J. J.; Olafson, B. D.; Redondo, A.; Zeiri, Y.; Steigerwald, M. L.; Carter, E. A.; Allison, J. N.; Chang, R., inProceedings of the Symposium on the Chemistry and Physics of Electrocatalysis;McIntyre, J. D. E., Weaver, M. J., Yeager, E. B., Eds.The Electrochemical Society, Inc.:Pennington, NJ, 1984; Vol. 84−12, pp63−95.

2. Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Deposited at Low Temperatures

3. Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films

4. The drive to miniaturization

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