Effects of oxygen impurity on the energy distribution of gap states in hydrogenated amorphous silicon studied by post-transit photocurrent spectroscopy-Reference-Cited by-同舟云学术

Effects of oxygen impurity on the energy distribution of gap states in hydrogenated amorphous silicon studied by post-transit photocurrent spectroscopy

Published:2007-08-10 Issue:7 Volume:76 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sakata I.,Kamei T.,Yamanaka M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.075206/fulltext

Reference25 articles.

1. Effect of carbon impurities on the density of states and the stability of hydrogenated amorphous silicon

2. Doping effect of oxygen or nitrogen impurity in hydrogenated amorphous silicon films

3. Influence of oxygen impurity in the intrinsic layer of amorphous silicon solar cells

4. Boron‐compensation effect on hydrogenated amorphous silicon with oxygen and nitrogen impurities

5. Sensitization of the electron lifetime ina-Si:H: The story of oxygen

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