Post-hydrogenation of amorphous hydrogenated silicon films modified by femtosecond laser irradiation-Reference-Cited by-同舟云学术

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Post-hydrogenation of amorphous hydrogenated silicon films modified by femtosecond laser irradiation

Published:2014-05-15 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Khenkin M.,Emelyanov A.,Kazanskii A.,Forsh P.,Kon'kov O.,Beresna M.,Gecevicius M.,Kazansky P.

Publisher

SPIE

Reference16 articles.

1. Reversible conductivity changes in discharge‐produced amorphous Si

2. Charge transport in microcrystalline silicon films;Ruff,1998

3. Peculiarity of constant photocurrent method for silicon films with mixed amorphous–nanocrystalline structure

4. Formation of (100)-Textured Si Film Using an Excimer Laser on a Glass Substrate

5. Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength;Chunyan,2011

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropy of optical, electrical, and photoelectrical properties of amorphous hydrogenated silicon films modified by femtosecond laser irradiation;Technical Physics;2017-06

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